inchange semiconductor product specification silicon npn power transistors 2SC3505 description ? with to-3pn package ? high voltage ,high reliability ? high speed switching applications ? switching regulators ? ultrasonic generators ? high frequency inverters ? general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current 6 a i b base current 3 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-a thermal resistance from junction to case 1.5 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3505 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 700 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 900 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.4a 0.5 v v besat base-emitter saturation voltage i c =2a ;i b =0.4a 1.2 v i cbo collector cut-off current v cb =900v; i e =0 1.0 ma i ebo emitter cut-off current v eb =10v; i c =0 1.0 ma h fe dc current gain i c =2a ; v ce =5v 10 switching times t on turn-on time 1.0 | s t stg storage time 5.0 | s t f fall time i c =3a;i b1 =0.6a;i b2 =-1.2a r l =100 |? ,p w =20 | s duty ? 2% 1.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC3505 package outline fig.2 outline dimensions
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